EPC Space Single FETs, MOSFETs EPC7020GC

The EPC7020GC is a radiation-hardened 200 V, 51 A eGaN® power FET designed for space and high-reliability applications, featuring a compact hermetic FSMD-G package with dual gate and source sense pin. It measures 7.8 mm x 8 mm with a height of 1.14 mm and weighs 0.170 g. The device has a maximum drain-to-source voltage of 200 V, a continuous drain current of 51 A at 5 V gate-source bias, and a maximum on-resistance of 14.5 mΩ at 25°C. Thermal resistance from junction to case is 1.84 °C/W. It operates from -55°C to +150°C junction temperature and is immune to total ionizing dose effects. The device meets ESD Class 1A standards and is constructed for use in satellite EPS, deep space probes, and nuclear facilities.