EPC Space Single FETs, MOSFETs EPC7019GC

The EPC7019GC is a radiation-hardened 40 V, 90 A eGaN® power HEMT designed for satellite, avionics, and deep space applications. It features a compact hermetic FSMD-G surface-mount package measuring 8.0 mm by 7.8 mm with dual gate, source, and source-sense pins. The device exhibits a maximum on-resistance of 4.5 mΩ at 25°C, a total gate charge of 27 nC, and junction-to-case thermal resistance of 1.84 °C/W. It operates from -55°C to +150°C, supports a peak drain current of 360 A in 300 µs pulses, and is rated for up to 48 V drain-to-source voltage under 5 ms pulses. The part is ESD Class 1B compliant and hermetically sealed for high-reliability space environments.