EPC Space Single FETs, MOSFETs EPC7018GC

The EPC7018GC is a 100 V radiation-hardened GaN power transistor designed for satellite, avionics, and deep space applications. It is housed in a compact hermetic FSMD-G package with dual gate and source sense pin, weighing 0.170 g. The device supports a continuous drain current of 80 A at a gate-source voltage of 5 V and has a drain-source on-resistance of 6.0 mΩ at 25°C. It is immune to total ionizing dose (LDR and HDR) and hardened against single event effects up to 82.3 MeV·cm²/mg. The junction operating temperature ranges from -55°C to +150°C, with thermal resistance from junction to case at 1.84 °C/W and junction to ambient at 45 °C/W. It meets ESD Class 1B standards.