EPC Space Single FETs, MOSFETs EPC7008CSH

The EPC7008CSH is a radiation-hardened, 300 V, 6 A eGaN® HEMT power transistor designed for commercial satellite EPS, avionics, deep space probes, and rad-hard DC-DC conversion. It comes in a compact hermetic FSMD-C surface-mount package weighing 0.113 g and features a source sense pin. The device has a maximum drain-to-source resistance of 370 mΩ at 6 A and 5 V gate drive, with a gate-to-source threshold voltage of 0.8 to 2.5 V. It is immune to total ionizing doses up to 1 Mrad and neutron fluences up to 4 × 10¹³ neutrons/cm², with single-event effect hardness up to 83.2 MeV·cm²/mg. Operating junction temperature ranges from -55°C to +150°C.