EPC Space Single FETs, MOSFETs EPC7007BC

Description
GANFET N-CH 200V 24A 4FSMD-B
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Description
GANFET N-CH 200V 24A 4FSMD-B
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Datasheet
Datasheet Summary
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The EPC7007BC is a radiation-hardened 200 V, 24 A eGaN™ power FET designed for satellite and avionics applications. It features a compact hermetic FSMD-B surface-mount package, a source sense pin, and a thermal resistance from junction to case of 4.02 °C/W. The device has a typical on-resistance of 29 mΩ at 25°C, a gate-to-source threshold voltage range of 0.8 to 2.5 V, and is immune to both low and high dose rate total ionizing radiation. It operates from -55°C to +150°C junction temperature, weighs 0.135 g, and meets ESD Class 1A.

Datasheet Summary
Powered by GS/AI

The EPC7007BC is a radiation-hardened 200 V, 24 A eGaN™ power FET designed for satellite and avionics applications. It features a compact hermetic FSMD-B surface-mount package, a source sense pin, and a thermal resistance from junction to case of 4.02 °C/W. The device has a typical on-resistance of 29 mΩ at 25°C, a gate-to-source threshold voltage range of 0.8 to 2.5 V, and is immune to both low and high dose rate total ionizing radiation. It operates from -55°C to +150°C junction temperature, weighs 0.135 g, and meets ESD Class 1A.

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - 4107-EPC7007BC-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
4107-EPC7007BC-ND
Single FETs, MOSFETs 4107-EPC7007BC-ND
GANFET N-CH 200V 24A 4FSMD-B

GANFET N-CH 200V 24A 4FSMD-B

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 4107-EPC7007BC-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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