The EPC7007BC is a radiation-hardened 200 V, 24 A eGaN™ power FET designed for satellite and avionics applications. It features a compact hermetic FSMD-B surface-mount package, a source sense pin, and a thermal resistance from junction to case of 4.02 °C/W. The device has a typical on-resistance of 29 mΩ at 25°C, a gate-to-source threshold voltage range of 0.8 to 2.5 V, and is immune to both low and high dose rate total ionizing radiation. It operates from -55°C to +150°C junction temperature, weighs 0.135 g, and meets ESD Class 1A.
GANFET N-CH 200V 24A 4FSMD-B
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 4107-EPC7007BC-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |