EPC Space Single FETs, MOSFETs EPC7002ASH

The EPC7002ASH is a radiation-hardened, 40 V, 15 A enhancement-mode GaN HEMT in a compact hermetic FSMD-A surface-mount package, designed for satellite and deep space applications. It features a drain-source on-resistance of 28 mΩ max at 25°C, a gate-source threshold voltage range of 0.8 to 2.5 V, and total ionizing dose immunity up to 1 Mrad. The device is hardened against single event effects up to 83.2 MeV·cm²/mg and neutron fluence of 1 × 10¹⁵ n/cm². Thermal resistance from junction to case is 12.08 °C/W, and junction temperature operates from -55°C to +150°C. The 4-pin package includes a source sense pin and complies with MIL-STD-750 for radiation testing. The part meets AEC-Q200 and RoHS standards. Weight is 0.068 g.