Allied Electronics, Inc. Photodiode; 7.5 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 40 pF (Typ.); -20 degC 70136778

Description
0.40 V (Min.) Open circuit Voltage, -20 to +75 °C Operating Temperature, Photodiode Low capacitance Fast switching time Low leakage current This planar, passivated silicon photodiode is designed to maximize response in the visible light spectrum of received energy.
Description
0.40 V (Min.) Open circuit Voltage, -20 to +75 °C Operating Temperature, Photodiode Low capacitance Fast switching time Low leakage current This planar, passivated silicon photodiode is designed to maximize response in the visible light spectrum of received energy.

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Photodiode; 7.5 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 40 pF (Typ.); -20 degC - 70136778 - Allied Electronics, Inc.
Fort Worth, TX, USA
Photodiode; 7.5 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 40 pF (Typ.); -20 degC
70136778
Photodiode; 7.5 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 40 pF (Typ.); -20 degC 70136778
0.40 V (Min.) Open circuit Voltage, -20 to +75 °C Operating Temperature, Photodiode Low capacitance Fast switching time Low leakage current This planar, passivated silicon photodiode is designed to maximize response in the visible light spectrum of received energy.

0.40 V (Min.) Open circuit Voltage, -20 to +75 °C Operating Temperature, Photodiode

  • Low capacitance
  • Fast switching time
  • Low leakage current
    This planar, passivated silicon photodiode is designed to maximize response in the visible light spectrum of received energy.
Supplier's Site

Technical Specifications

  Allied Electronics, Inc.
Product Category Photodiodes
Product Number 70136778
Product Name Photodiode; 7.5 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 40 pF (Typ.); -20 degC
Spectral Response Range 400 to 700 nm (4000 to 7000 Å)
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