Efficient Power Conversion Corporation Single FETs, MOSFETs EPC2302ENGRT

The EPC2302 is a 100 V enhancement mode GaN power transistor in a 3 x 5 mm QFN package with an exposed top for top-side thermal management. It features a maximum on-resistance of 1.8 mΩ at 25°C and a typical value of 1.4 mΩ, with zero reverse recovery charge. The device has a thermal resistance from junction to case top of 0.2 °C/W and is rated for a junction operating temperature range of -40°C to 150°C. The package has side-wettable flanks and is moisture-sensitive level MSL1. The exposed top is electrically connected to the source, and the device operates with a gate drive voltage of 5 V typical, requiring no negative gate voltage. It meets the RoHS standard and is designed for high-efficiency, high-frequency DC-DC converters, synchronous rectification, and motor drives.