Efficient Power Conversion Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single EPC2203

Win Source Part Number: 1146122-EPC2203
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, eGaN®
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Package / Case: Die
Supplier Device Package: Die
Gate Charge (Qg) (Max) @ Vgs: 0.83 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 50 V
Vgs (Max): +5.75V, -4V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0040
Mfr: EPC
Other Names: 917-1200-1,917-1200-2,917-1200-6
Drive Voltage (Max Rds On, Min Rds On): 5V

N-Channel 80V 1.7A (Ta) Surface Mount Die

N-Channel 80V 1.7A (Ta) Surface Mount Die

N-Channel 80V 1.7A (Ta) Surface Mount Die