Mosfet Array 2 N-Channel (Half Bridge) 100V 1.7A Surface Mount Die
Mosfet Array 2 N-Channel (Half Bridge) 100V 1.7A Surface Mount Die
Mosfet Array 2 N-Channel (Half Bridge) 100V 1.7A Surface Mount Die
Win Source Part Number: 1382021-EPC2106
Category: Discrete Semiconductor Products>Transistors
Series: eGaN®
Package: Tape & Reel
Standard Package: 2,500 pcs
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0040
Mfr: EPC
Base Product Number: EPC210
Moisture Sensitivity Level (MSL): 1 (Unlimited)
| DigiKey | Win Source Electronics | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 917-1110-6-ND | 1382021-EPC2106 |
| Product Name | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays |
| Transistor Technology / Material | Gallium Nitride |
