Efficient Power Conversion Corporation 100V 1.7A MOSFET Transistor EPC2106

GANFET 2N-CH 100V 1.7A DIE Product overview: EPC2106 from EPC is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-EPC2106 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1382021-EPC2106
Category: Discrete Semiconductor Products>Transistors>FETs, MOSFETs>FET, MOSFET Arrays
Series: eGaN®
Package: Tape & Reel
Standard Package: 2,500 pcs
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.7A
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 50V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0040
Mfr: EPC
Base Product Number: EPC210
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Mosfet Array 2 N-Channel (Half Bridge) 100V 1.7A Surface Mount Die

Mosfet Array 2 N-Channel (Half Bridge) 100V 1.7A Surface Mount Die

Mosfet Array 2 N-Channel (Half Bridge) 100V 1.7A Surface Mount Die