Efficient Power Conversion Corporation FET, MOSFET Arrays EPC2103ENGRT

The EPC2103 is a half-bridge enhancement-mode gallium nitride (GaN) power transistor integrated circuit with a continuous drain-source voltage rating of 80 V and a maximum drain current of 30 A. It is supplied in a passivated die form with solder bumps, measuring 6.05 mm by 2.3 mm. The device features a typical on-resistance of 5.5 mΩ at 25°C, zero reverse recovery charge, and low gate charge for high-frequency operation. Thermal resistance from junction to case is 0.3 °C/W, and junction-to-ambient is 42 °C/W on a 1 sq. in. copper pad. Operating junction temperature ranges from -40°C to 150°C. The die is designed for surface mount applications and meets MSL 1 moisture sensitivity requirements.