Efficient Power Conversion Corporation FET, MOSFET Arrays EPC2102ENGRT

The EPC2102 is an enhancement-mode gallium nitride (GaN) power transistor in a half-bridge configuration, designed for high-frequency, high-efficiency power conversion. It is supplied in a passivated die form with solder bumps, with a die size of 6.05 x 2.3 mm. The device has a continuous drain-to-source voltage rating of 60 V and a continuous drain current of 30 A at 25°C. Its typical on-resistance is 4.9 mΩ at 20 A and 5 V gate-source voltage. The operating junction temperature ranges from -40°C to 150°C. Thermal resistance from junction to case is 0.3 °C/W for Q1 and 2.2 °C/W for Q2. The device features zero reverse recovery charge and is suitable for applications requiring high switching frequencies and compact footprints.