Efficient Power Conversion Corporation FET, MOSFET Arrays EPC2101ENGRT

The EPC2101 is a monolithic enhancement-mode gallium nitride (GaN) power transistor in a half-bridge configuration, supplied as a passivated die with solder bumps for surface mount mounting. The die measures 6.05 x 2.3 mm. It integrates two internally connected FETs: a high-side device rated for 60 V continuous drain-to-source voltage and 10 A continuous current, and a low-side device rated for 60 V continuous drain-to-source voltage and 40 A continuous current. On-resistance is 11.5 mΩ for the high-side FET and 2.8 mΩ for the low-side FET at 25°C. Gate-to-source voltage ranges from -4 V to 6 V. Operating junction temperature spans from -40°C to 150°C. The device is designed for high-frequency DC-DC and point-of-load converters, benefiting from low gate charge, zero reverse recovery charge, and minimal output capacitance.