Efficient Power Conversion Corporation Single FETs, MOSFETs EPC2038

The EPC2038 is an enhancement mode power transistor featuring an integrated reverse gate clamp diode, designed for high efficiency and low on-state resistance. It operates with a maximum drain-to-source voltage (V_{DS}) of 100 V and a continuous drain current (I_{D}) of 0.5 A at 25¬8C. The device exhibits a low on-resistance (R_{DS(on)}) of 3300 m,Ѷ, making it suitable for applications requiring high switching frequencies and minimal on-state losses. The transistor is constructed using Gallium Nitride technology, which provides high electron mobility and a low temperature coefficient. This results in low gate charge (Q_{G}) and zero reverse recovery charge (Q_{RR}), enhancing its performance in fast-switching applications. The operating temperature range is broad, from -40¬8C to 150¬8C, allowing for versatility in various environments. Applications for the EPC2038 include synchronous bootstrap for high-speed DC-DC conversion, wireless power transfer, and high-frequency switching circuits. The device is supplied in die form with solder bumps, suitable for surface mount assembly. It is classified as moisture sensitivity level 1, indicating it can be handled without special precautions.