Efficient Power Conversion Corporation Single FETs, MOSFETs EPC2034

The EPC2034 is an enhancement mode gallium nitride (GaN) power FET designed for high-frequency switching applications such as DC-DC conversion, motor drives, and class-D audio. It is supplied in a passivated die form with solder bumps, measuring 4.6 mm × 2.6 mm. The device has a continuous drain-source voltage rating of 200 V and a maximum continuous drain current of 48 A at 25°C. Its typical drain-source on-resistance is 10 mΩ at 5 V gate-source voltage and 20 A drain current. Thermal resistance from junction to case is 0.45°C/W and junction to ambient is 45°C/W on a one square inch copper pad. The gate threshold voltage ranges from 0.8 V to 2.5 V, and the device operates from -40°C to 150°C junction temperature. Input, output, and reverse transfer capacitances are specified at 950-1140 pF, 450-680 pF, and 2.3 pF respectively, under defined test conditions.