Efficient Power Conversion Corporation 200V 8.5A MOSFET Transistor EPC2019

GANFET N-CH 200V 8.5A DIE Product overview: EPC2019 from EPC is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 8.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 8.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-EPC2019 can be used for catalog matching and distributor lookup.

N-Channel 200V 8.5A (Ta) Surface Mount Die

N-Channel 200V 8.5A (Ta) Surface Mount Die

N-Channel 200V 8.5A (Ta) Surface Mount Die

Win Source Part Number: 1005945-EPC2019
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: eGaN®
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 7A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Package / Case: Die
Supplier Device Package: Die
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 288 pF @ 100 V
Vgs (Max): +6V, -4V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0040
Mfr: EPC
Other Names: 917-1087-1,917-1087-2,917-1087-6
Drive Voltage (Max Rds On, Min Rds On): 5V