Efficient Power Conversion Corporation Single FETs, MOSFETs EPC2018

The EPC2018 is an enhancement mode gallium nitride (GaN) power FET designed for high-efficiency, high-frequency switching applications. It is supplied in a passivated die form with solder bars and has a drain-to-source voltage rating of 150 V and a continuous drain current of 12 A at 25°C. The typical drain-source on-resistance is 25 mΩ at a gate-source voltage of 5 V and drain current of 6 A. The gate charge is 7.5 nC maximum, output capacitance is 350 pF maximum, and reverse recovery charge is zero. Thermal resistance from junction to board is 16 °C/W and junction to ambient is 56 °C/W on a single-layer FR4 board with 1 in² of 2 oz copper. Operating junction temperature ranges from -40°C to 125°C. The die dimensions are 3.554 mm by 1.632 mm.