Efficient Power Conversion Corporation Single FETs, MOSFETs EPC2014

The EPC2014 is an enhancement mode gallium nitride (GaN) FET designed for high-efficiency, high-frequency power conversion applications. It is supplied in a passivated die form with solder bumps and has a drain-source voltage rating of 40 V and a continuous drain current of 10 A at 25°C. The on-resistance is 16 mΩ at 5 V gate-source voltage and 25°C, with a thermal resistance from junction to case of 6.9 °C/W and junction to ambient of 80 °C/W when mounted on a one-square-inch copper pad. The device operates from -40°C to 150°C junction temperature and meets moisture sensitivity level 1 per IPC/JEDEC standards. Its lateral structure provides ultra-low gate charge and zero reverse recovery charge, enabling high switching efficiency. No external packaging or mounting dimensions beyond die layout are specified under the part number.