Efficient Power Conversion Corporation Single FETs, MOSFETs EPC2010

The EPC2010 is an enhancement mode gallium nitride (GaN) FET designed for high-efficiency, high-frequency power conversion applications. It is supplied in a passivated die form with solder bars and has a drain-source voltage rating of 200 V and a continuous drain current of 12 A at 25°C. The device features a typical drain-source on-resistance of 25 mΩ at VGS = 5 V and ID = 6 A, with a gate threshold voltage range of 0.7 to 2.5 V. Dynamic characteristics include an output capacitance of 270 to 350 pF and a gate-to-drain charge of 1.7 to 2.6 nC. The die dimensions are 3554 µm by 1632 µm, with a die marking that includes "2010" and a dot for orientation. Thermal resistance from junction to case is 2.4 °C/W, and junction-to-board thermal resistance is 16 °C/W. The operating junction temperature range is -40°C to 125°C.