Efficient Power Conversion Corporation Single FETs, MOSFETs EPC2007

The EPC2007 is an enhancement mode gallium nitride (GaN) FET designed for high-efficiency, high-frequency power conversion applications. It is supplied in a passivated die form with solder bumps, measuring 1.702 mm by 1.087 mm, and has a 5-solder-bar layout. The device is rated for a continuous drain-to-source voltage of 100 V and a maximum continuous drain current of 6 A at 25°C, with a typical on-resistance of 30 mΩ at V_GS = 5 V. It operates from -40°C to 125°C junction temperature and meets MSL 1 moisture sensitivity level per IPC/JEDEC. Thermal resistance from junction to case is 6.9°C/W and junction to board is 32°C/W. All measurements were performed with the substrate shorted to the source.