Cornell Dubilier Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors DSF305Q3R0

Description
Manufacturer: AMIS Category: Discrete Semiconductor Products>Transistors >Bipolar (BJT)>Single, Pre-Biased Bipolar Transistors Packaging: Bulk Part Status: Obsolete Capacitance: 0.22μF Tolerance: ±20% Voltage - Rated: 1.3VDC ESR (Equivalent Series Resistance): 5mOhm Lifetime @ Temp.: 2500 Hrs @ 125°C Mounting Type: Fixed Package / Case: 32-PowerFQFN
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Description
Manufacturer: AMIS Category: Discrete Semiconductor Products>Transistors >Bipolar (BJT)>Single, Pre-Biased Bipolar Transistors Packaging: Bulk Part Status: Obsolete Capacitance: 0.22μF Tolerance: ±20% Voltage - Rated: 1.3VDC ESR (Equivalent Series Resistance): 5mOhm Lifetime @ Temp.: 2500 Hrs @ 125°C Mounting Type: Fixed Package / Case: 32-PowerFQFN
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Datasheet
Datasheet Summary
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The DSF305Q3R0 is a high-power density, ultracapacitor designed for pulse power applications such as battery backup, energy harvesting, and LED displays. It has a rated voltage of 3.0V DC, a capacitance of 3.0F, and an ESR of 3.1 mΩ at 20°C. The device operates from -40°C to +85°C and supports 500,000 charge/discharge cycles with less than 200% ESR change. It features a cylindrical case with dimensions of 8mm diameter by 20mm height, lead spacing of 3.5mm, and lead diameter of 0.6mm. It is RoHS compliant and meets UL 94 V-0 flammability standard.

Datasheet Summary
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The DSF305Q3R0 is a high-power density, ultracapacitor designed for pulse power applications such as battery backup, energy harvesting, and LED displays. It has a rated voltage of 3.0V DC, a capacitance of 3.0F, and an ESR of 3.1 mΩ at 20°C. The device operates from -40°C to +85°C and supports 500,000 charge/discharge cycles with less than 200% ESR change. It features a cylindrical case with dimensions of 8mm diameter by 20mm height, lead spacing of 3.5mm, and lead diameter of 0.6mm. It is RoHS compliant and meets UL 94 V-0 flammability standard.

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors -  - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Manufacturer: AMIS Category: Discrete Semiconductor Products>Transistors >Bipolar (BJT)>Single, Pre-Biased Bipolar Transistors Packaging: Bulk Part Status: Obsolete Capacitance: 0.22μF Tolerance: ±20% Voltage - Rated: 1.3VDC ESR (Equivalent Series Resistance): 5mOhm Lifetime @ Temp.: 2500 Hrs @ 125°C Mounting Type: Fixed Package / Case: 32-PowerFQFN

Manufacturer: AMIS
Category: Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Single, Pre-Biased Bipolar Transistors
Packaging: Bulk
Part Status: Obsolete
Capacitance: 0.22μF
Tolerance: ±20%
Voltage - Rated: 1.3VDC
ESR (Equivalent Series Resistance): 5mOhm
Lifetime @ Temp.: 2500 Hrs @ 125°C
Mounting Type: Fixed
Package / Case: 32-PowerFQFN

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Package Type SOT3
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