Dongguan Pingjing Microelectronics Technology Co., Ltd. Transistors PJM60H02NTE

Description
600V 2A 3.6Ω@10V,1A 35W 3V@250uA 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - PJM60H02NTE - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
600V 2A 3.6Ω@10V,1A 35W 3V@250uA 1 N-Channel TO-252 MOSFETs ROHS

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Description
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Transistors - PJM60H02NTE - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
PJM60H02NTE
Transistors PJM60H02NTE
600V 2A 3.6Ω@10V,1A 35W 3V@250uA 1 N-Channel TO-252 MOSFETs ROHS

600V 2A 3.6Ω@10V,1A 35W 3V@250uA 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number PJM60H02NTE
Product Name Transistors
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