P-channel enhancement mode MOSFET with a drain-source voltage rating of -20 V, continuous drain current of -1 A, and maximum power dissipation of 500 mW, housed in an SOT-23 (TO-236) package. The on-state resistance is less than 0.3 Ω at V_GS = 4.5 V and I_D = 1 A. Junction temperature range is -55°C to +150°C. Compliant with RoHS and AEC-Q101 for variants with -Q suffix. Taped and reeled packaging, weight approximately 0.01 g, soldering conditions 260°C/10 s, MSL 3. Case material meets UL 94V-0.
MOSFET N-CH 20V 1A SOT23-3
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 4878-MMFTP332TR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |