Diotec Semiconductor Single FETs, MOSFETs MMFTP3160-AQ

P-Channel enhancement mode MOSFET rated for 30 V drain-source voltage and 2.6 A continuous drain current, with a maximum power dissipation of 1400 mW. Housed in an SOT-23 package, it meets AEC-Q101 qualification standards. Junction temperature range is -55°C to 150°C. On-state resistance is 90 mΩ at V_GS = -10 V and I_D = 2.6 A. Gate-source threshold voltage is 2.0 V. Total gate charge is 8.3 nC at V_DD = 20 V and I_D = 2.6 A. Complies with RoHS and REACH regulations.