Diotec Semiconductor Single FETs, MOSFETs DIW120SIC059-AQ

The DIW120SIC059-AQ is a silicon carbide (SiC) MOSFET for high-efficiency power conversion in DC/DC converters, power supplies, and charging stations. It is packaged in a TO-247 case with a maximum junction temperature of 175°C and dissipates up to 278 W at 25°C. The device has a drain-source breakdown voltage of 1200 V, a continuous drain current of 68 A at 25°C, and an on-state resistance below 53 mΩ at 25°C. It is AEC-Q101 compliant, avalanche rated, and 100% avalanche tested. Gate-source voltage is limited to -4 V to 18 V (maximum -8 V to 22 V). Total gate charge is 121 nC, and thermal resistance junction-to-case is 0.44 K/W. The body diode has a reverse recovery time of 38 ns and charge of 109 nC at 20 A. Weight is approximately 6 g and it complies with RoHS and REACH.