Diotec Semiconductor Single FETs, MOSFETs DIW065SIC049

The DIW065SIC049 is a silicon carbide (SiC) MOSFET designed for high-efficiency power conversion in applications such as DC/DC converters, power supplies, and charging stations. It comes in a TO-247 package with a maximum drain-source voltage of 650 V, a continuous drain current of 60 A at 25°C, and a maximum power dissipation of 395 W. The on-state resistance is less than 49 mΩ at 25°C, and the maximum junction temperature is 175°C. The device is avalanche rated, 100% avalanche tested, and compliant with AEC-Q101 for automotive applications when marked with the -Q suffix. It meets RoHS, REACH, and Conflict Minerals requirements. Thermal resistance from junction to case is 0.21 K/W, and the package is rated for soldering conditions of 260°C for 10 seconds with UL 94 V-0 housing material.