Diotec Semiconductor Single FETs, MOSFETs DIW065SIC015

The DIW065SIC015 is a silicon carbide (SiC) MOSFET designed for high-efficiency power conversion in applications such as DC/DC converters, power supplies, and inverters. It is packaged in a TO-247 case with a maximum power dissipation of 550 W and a continuous drain current of 150 A at 25°C. The device features a drain-source breakdown voltage of 650 V, an on-state resistance of up to 15 mΩ at 25°C, and a maximum junction temperature of 175°C. It is avalanche rated, 100% avalanche tested, and compliant with AEC-Q101 when designated with the -Q suffix. The thermal resistance from junction to case is 0.21 K/W. The part is RoHS compliant and marked for solder and assembly conditions of 260°C for 10 seconds.