Diotec Semiconductor Single FETs, MOSFETs DIJ4A5N65

DIJ4A5N65 is an N-channel power MOSFET rated for 650 V drain-source voltage and 4.5 A continuous drain current at 100°C, designed for DC/DC converters, power supplies, and industrial drives. It is housed in an ITO-220 package with a thermal resistance from junction to case of less than 2.7 K/W and junction-to-ambient of less than 62.5 K/W. The on-state resistance is specified at a maximum of 1.3 Ω at 25°C, with a gate charge of 22 nC. The device is rated for single-pulse avalanche energy up to 281 mJ and meets RoHS and UL 94 V-0 standards. The AEC-Q101 compliant variant is available. The package weight is approximately 2 g, with soldering conditions rated at 260°C for 10 seconds.