Diotec Semiconductor Single FETs, MOSFETs DIF170SIC049

The DIF170SIC049 is a silicon carbide (SiC) MOSFET designed for high-efficiency power conversion in DC/DC converters, power supplies, and charging stations. It is packaged in a TO-247-4L case with a maximum junction temperature of 175°C and a power dissipation of 357 W at 25°C case temperature. The device has a drain-source voltage rating of 1700 V, a continuous drain current of 67 A at 25°C, and a typical on-state resistance of 49 mΩ at 25°C. It is avalanche-rated with 100% testing, features low gate charge of 179 nC, and meets AEC-Q101 compliance for automotive applications. The case material is UL 94 V-0, and it supports soldering at 260°C for 10 seconds. Thermal resistance from junction to case is 0.45 K/W.