Diotec Semiconductor Single FETs, MOSFETs DIF120SIC028

The DIF120SIC028 is a silicon carbide (SiC) MOSFET designed for high-efficiency power conversion in applications such as DC/DC converters, power supplies, and inverters. It is packaged in a TO-247-4L case with a weight of approximately 6 g. The device has a drain-source voltage rating of 1200 V, a continuous drain current of 109 A at 25°C, and a maximum junction temperature of 175°C. Its on-state resistance is less than 26 mΩ at 25°C, with a power dissipation capability of 469 W. The MOSFET is 100% avalanche tested, features low gate charge of 150 nC, and is certified as AEC-Q101 compliant when denoted with suffix -Q. It complies with RoHS, REACH, and WEEE directives.