Diotec Semiconductor Single FETs, MOSFETs DIF120SIC022

The DIF120SIC022 is a silicon carbide (SiC) MOSFET designed for high-efficiency power conversion applications such as DC/DC converters, power supplies, and industrial drives. It is packaged in a TO-247-4L case with a Kelvin source for reduced gate noise and faster switching. The device has a drain-source voltage rating of 1200 V, a continuous drain current of 120 A at 25°C, and a maximum junction temperature of 175°C. Its on-state resistance is rated below 22.3 mΩ at 25°C. The MOSFET is avalanche-rated and compliant with RoHS, REACH, and conflict minerals regulations. It meets AEC-Q101 standards for automotive applications when designated with the -Q or -AQ suffix. Thermal resistance from junction to case is 0.44 K/W, measured at the heat flange.