Diotec Semiconductor Single FETs, MOSFETs DIF065SIC030

The DIF065SIC030 is a silicon carbide (SiC) MOSFET designed for high-efficiency power conversion in applications such as DC/DC converters, power supplies, and electric tools. It features a TO-247-4L package with a drain-source voltage rating of 650 V and a continuous drain current of 105 A at 25°C. The device has a maximum on-state resistance of 30 mΩ at 25°C, a gate-source threshold voltage range of 2.0 V to 4.0 V, and uses a Kelvin source for reduced gate noise and fast switching. It supports a maximum junction temperature of 175°C, has an avalanche-rated capability, and meets AEC-Q101 compliance when designated with the -Q suffix. The thermal resistance from junction to case is 0.21 K/W, and the package is rated UL 94 V-0.