The DID3A2N65 is an N-channel power MOSFET designed for DC/DC converters, power supplies, and industrial drives. It is packaged in a TO-251 case with a maximum drain-source voltage of 650 V and a continuous drain current of 3.2 A at 25°C. The device has a maximum on-state resistance of 2.6 Ω, a power dissipation of 54 W, and an avalanche energy rating of 180 mJ. It operates with a junction temperature range of -55°C to 150°C and is compliant with AEC-Q101 for automotive applications when designated with suffix -Q. The package meets UL 94 V-0 flammability requirements and is RoHS compliant. The device has a thermal resistance from junction to case of less than 0.51 K/W.
MOSFET N-CH 650V 3.2A TO-251-3
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 4878-DID3A2N65-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |