N-channel power MOSFET in a TO-252AA (D-PAK) package with a 650 V drain-source voltage, 5.7 A continuous drain current at 25°C, and a maximum on-state resistance of 430 mΩ. The device is avalanche-rated with 45 mJ single-pulse energy, has a maximum junction temperature of 150°C, and is ESD-protected. Thermal resistance from junction to case is 3.4 K/W, and junction to ambient is 50 K/W. It is available in a taped and reeled format, meets RoHS compliance, and is qualified to AEC-Q101 standard with the -Q suffix.
MOSFET N-CH 650V 5.7A TO-252-3
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 4878-DI5A7N65D1KTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |