Diotec Semiconductor FET, MOSFET Arrays DI5A6C04SQ

The DI5A6C04SQ is a dual complementary N- and P-channel power MOSFET in an SO-8 package, designed for load switching and polarity protection in battery-powered devices and power management units. It features a drain-source voltage rating of ±40 V, continuous drain currents of 5.6 A and -4.7 A, and on-state resistances below 36 mΩ and 45 mΩ for the N- and P-channel devices, respectively. The package has a low profile and is rated for operation from -55°C to 150°C with a power dissipation of 1.95 W. It meets AEC-Q101 qualification standards, is RoHS compliant, and is supplied taped and reeled. The thermal resistance from junction to ambient is less than 64 K/W when mounted on a 625 mm² copper pad.