Diotec Semiconductor FET, MOSFET Arrays DI4A5C06SQ

DI4A5C06SQ is a dual N+P channel power MOSFET in a SO-8 package, designed for power management, MOSFET/IGBT driver, and Class-D audio amplifier applications. The device features a drain-source voltage rating of ±60 V, continuous drain current of 4.5 A (N-channel) and -3.5 A (P-channel), and maximum on-state resistance of 55 mΩ (N-channel) and 105 mΩ (P-channel). It supports a junction temperature range of -55°C to +150°C, with a power dissipation of 1.6 W mounted on a 625 mm² copper pad. The package complies with UL 94 V-0, RoHS, REACH, and AEC-Q101 standards. Thermal resistance from junction to case is less than 40 K/W, and junction to ambient is less than 78 K/W. The device is supplied taped and reeled, with a weight of approximately 0.1 g.