Diotec Semiconductor Single FETs, MOSFETs DI1A5N60D1

N-channel power MOSFET with 600 V drain-source breakdown voltage, 1.5 A continuous drain current, and on-state resistance less than 8 Ω, housed in a TO-252AA (D-PAK) package. It features avalanche energy rating of 30 mJ, junction temperature range of -55 to 150 °C, and is RoHS compliant with UL 94 V-0 case material. The device meets AEC-Q101 qualification for automotive applications when designated with suffix -Q. Thermal resistance from junction to case is 5 K/W, and junction to ambient is 100 K/W when mounted on a PCB with 6.45 cm² copper per terminal. Taped and reeled packaging contains 2500 units per 13" reel.