Diotec Semiconductor Single FETs, MOSFETs DI110N06D2-AQ

The DI110N06D2-AQ is an N-channel power MOSFET in a TO-263AB (D2PAK) package, rated for a drain-source voltage of 60 V and a continuous drain current of 110 A at 25°C, with a maximum junction temperature of 150°C. It has a drain-source on-state resistance of up to 3.2 mΩ at 10 V gate drive and 100 A drain current. The device features avalanche capability with a single-pulse energy rating of 100.3 mJ, low gate charge of 75 nC, and is AEC-Q101 qualified. Thermal resistance from junction to case is less than 2 K/W. The package is tape-and-reel mounted, compatible with standard reflow soldering at 260°C for 10 seconds, and complies with RoHS and UL 94 V-0.