Diotec Semiconductor Single FETs, MOSFETs DI049N06PTK-AQ

N-Channel Power MOSFET for power management and load switching, housed in a QFN3x3 package, with a drain-source voltage rating of 65 V, continuous drain current of 49 A at 25°C, and drain-source on-state resistance of less than 6.1 mΩ at 10 V gate voltage. The device supports a maximum junction temperature of 150°C, has a single pulse avalanche energy of 4.1 mJ, and is AEC-Q101 qualified. It features ESD-protected gate, low gate charge of 31 nC, and thermal resistance from junction to case of less than 5 K/W.