Diotec Semiconductor Single FETs, MOSFETs DI022P06D1

P-Channel power MOSFET for DC/DC converters, power supplies, and synchronous rectifiers, packaged in a TO-252AA (D-PAK) case with dimensions supporting surface-mount assembly. Rated for a drain-source voltage of 60 V, continuous drain current of 22 A at 25°C, and power dissipation of 43 W. On-state resistance is less than 45 mΩ at 10 V gate-source voltage. Junction temperature ranges from -55°C to 150°C. Features avalanche capability with 30 mJ single-pulse energy rating. Compliant to RoHS (exemption 7a-I), REACH, and UL 94 V-0 for case material. AEC-Q101 compliant variants available. MSL rating 3. Thermal resistance junction to case is 2.9 K/W.