Diotec Semiconductor Single FETs, MOSFETs DI005P04PW

P-Channel power MOSFET with a 40 V drain-source breakdown voltage and a continuous drain current of -6 A at 25°C, housed in a QFN2x2 surface-mount package measuring 2 mm x 2 mm. The device has a maximum on-state resistance of 40 mΩ at Vₑₓ = 10 V and Iₓ = 4 A, a total gate charge of 19 nC, and is rated for a maximum junction temperature of 150°C. It is avalanche rated with a single-pulse avalanche energy of 33 mJ and complies with AEC-Q101 when designated with suffix -Q. The package meets UL 94 V-0 flammability standards and is RoHS compliant.