NPN silicon epitaxial planar transistors for general-purpose use in a TO-92 plastic case, weighing approximately 0.18 g, with a power dissipation of 500 mW and a collector-emitter voltage rating of 45 V. The collector current is 100 mA, with a peak collector current of 200 mA. The junction and storage temperature range is -55°C to +150°C. The DC current gain (hFE) for the B group is 200 to 450 at V_CE = 5 V and I_C = 2 mA. The gain-bandwidth product is 300 MHz. The package material meets UL 94 V-0 flammability rating. These transistors are designed for standard commercial and industrial applications.
Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 500mW Through Hole TO-92
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 4878-BC547BBK-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |