Diotec Semiconductor Single Bipolar Transistors BC547BBK

Description
Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 500mW Through Hole TO-92
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Description
Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 500mW Through Hole TO-92
Request a Quote
Datasheet
Datasheet Summary
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NPN silicon epitaxial planar transistors for general-purpose use in a TO-92 plastic case, weighing approximately 0.18 g, with a power dissipation of 500 mW and a collector-emitter voltage rating of 45 V. The collector current is 100 mA, with a peak collector current of 200 mA. The junction and storage temperature range is -55°C to +150°C. The DC current gain (hFE) for the B group is 200 to 450 at V_CE = 5 V and I_C = 2 mA. The gain-bandwidth product is 300 MHz. The package material meets UL 94 V-0 flammability rating. These transistors are designed for standard commercial and industrial applications.

Datasheet Summary
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NPN silicon epitaxial planar transistors for general-purpose use in a TO-92 plastic case, weighing approximately 0.18 g, with a power dissipation of 500 mW and a collector-emitter voltage rating of 45 V. The collector current is 100 mA, with a peak collector current of 200 mA. The junction and storage temperature range is -55°C to +150°C. The DC current gain (hFE) for the B group is 200 to 450 at V_CE = 5 V and I_C = 2 mA. The gain-bandwidth product is 300 MHz. The package material meets UL 94 V-0 flammability rating. These transistors are designed for standard commercial and industrial applications.

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Single Bipolar Transistors - 4878-BC547BBK-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
4878-BC547BBK-ND
Single Bipolar Transistors 4878-BC547BBK-ND
Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 500mW Through Hole TO-92

Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 500mW Through Hole TO-92

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 4878-BC547BBK-ND
Product Name Single Bipolar Transistors
Polarity NPN
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