P-Channel enhancement mode MOSFET for signal processing, driver stages, and logic level conversion, housed in an SOT-23-3 (TO-236) package measuring 3.04 x 1.40 x 1.12 mm. Rated for a drain-source voltage of 30 V and a continuous drain current of 4 A, with a maximum on-state resistance of 65 mΩ at 10 V gate-source voltage and 4 A drain current. Maximum power dissipation is 1.0 W on a ceramic substrate, with a junction temperature range of -55°C to 150°C. Compliant with RoHS and UL 94 V-0. Meets AEC-Q101 for automotive applications where marked -Q or -AQ.
Win Source Part Number: 1106797-MMFTP3401
Category: Discrete Semiconductor Products>Transistors
Package: Strip
Standard Package: 30
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 0 V
Vgs (Max): ±12V
Temperature Range - Operating: 150°C (TJ)
Fake Threat In the Open Market: 59 pct.
Mfr: Diotec Semiconductor
Other Names: 2721-MMFTP3401
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1106797-MMFTP3401 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single |
| Polarity | P-Channel |
