Diotec Electronics Corporation Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased MMDT5214W

Description
Win Source Part Number: 1079531-MMDT5214W Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Strip Standard Package: 30 Mounting: SMD (SMT) Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN - Pre-Biased Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250 MHz Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Fake Threat In the Open Market: 63 pct. Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Mfr: Diotec Semiconductor Other Names: 2721-MMDT5214W
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Description
Win Source Part Number: 1079531-MMDT5214W Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Strip Standard Package: 30 Mounting: SMD (SMT) Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN - Pre-Biased Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250 MHz Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Fake Threat In the Open Market: 63 pct. Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Mfr: Diotec Semiconductor Other Names: 2721-MMDT5214W
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Datasheet
Datasheet Summary
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The MMDT5214W is a surface-mount NPN transistor with integrated bias resistors, designed for digital switching and signal processing applications. It is packaged in an SOT-323 case, measures approximately 2.0 x 1.25 x 0.9 mm, and is supplied taped and reeled in 3000-piece quantities. The device has a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation of 200 mW. The junction temperature range is -55°C to +150°C. The input resistor R1 is 10 kΩ and R2 is 47 kΩ, with a DC current gain (hFE) of 80 at 10 mA collector current and 5 V collector-emitter voltage. The transition frequency is 250 MHz. The part is AEC-Q101 qualified and meets RoHS, REACH, and Conflict Minerals requirements. The case material complies with UL 94 V-0, and soldering conditions are rated at 260°C for 10 seconds. MSL 1.

Datasheet Summary
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The MMDT5214W is a surface-mount NPN transistor with integrated bias resistors, designed for digital switching and signal processing applications. It is packaged in an SOT-323 case, measures approximately 2.0 x 1.25 x 0.9 mm, and is supplied taped and reeled in 3000-piece quantities. The device has a maximum collector-emitter voltage of 50 V, a continuous collector current of 100 mA, and a power dissipation of 200 mW. The junction temperature range is -55°C to +150°C. The input resistor R1 is 10 kΩ and R2 is 47 kΩ, with a DC current gain (hFE) of 80 at 10 mA collector current and 5 V collector-emitter voltage. The transition frequency is 250 MHz. The part is AEC-Q101 qualified and meets RoHS, REACH, and Conflict Minerals requirements. The case material complies with UL 94 V-0, and soldering conditions are rated at 260°C for 10 seconds. MSL 1.

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - 1079531-MMDT5214W - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased
1079531-MMDT5214W
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased 1079531-MMDT5214W
Win Source Part Number: 1079531-MMDT5214W Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Strip Standard Package: 30 Mounting: SMD (SMT) Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN - Pre-Biased Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250 MHz Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Fake Threat In the Open Market: 63 pct. Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Mfr: Diotec Semiconductor Other Names: 2721-MMDT5214W

Win Source Part Number: 1079531-MMDT5214W
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Strip
Standard Package: 30
Mounting: SMD (SMT)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: NPN - Pre-Biased
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250 MHz
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Fake Threat In the Open Market: 63 pct.
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Mfr: Diotec Semiconductor
Other Names: 2721-MMDT5214W

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 1079531-MMDT5214W
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased
Polarity NPN
Package Type SOT3; SOT323
IC(max) 100 milliamps
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