Diotec Electronics Corporation Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single BC546BBK

Description
Manufacturer: Diotec Semiconductor Win Source Part Number: 1324248-BC546BBK Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Packaging: Strip Standard Package: 30 Mounting: Through Hole Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 65 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-226-3, TO-92-3 (TO-226AA) Fake Threat In the Open Market: 85 Other Part Number: 2721-BC546BBK RoHS Status: ROHS3 Compliant
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Description
Manufacturer: Diotec Semiconductor Win Source Part Number: 1324248-BC546BBK Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Packaging: Strip Standard Package: 30 Mounting: Through Hole Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 65 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-226-3, TO-92-3 (TO-226AA) Fake Threat In the Open Market: 85 Other Part Number: 2721-BC546BBK RoHS Status: ROHS3 Compliant
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Datasheet
Datasheet Summary
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The BC546xBK series consists of NPN silicon epitaxial planar transistors designed for general-purpose applications, housed in a TO-92 plastic case measuring 4.6±0.1 mm in length with a weight of approximately 0.18 g. The case material meets UL 94V-0 flammability rating. The BC546 variant has a maximum collector-emitter voltage of 85 V and collector-base voltage of 80 V, with a continuous collector current rating of 100 mA and peak current of 200 mA. Power dissipation is rated at 500 mW, with thermal resistance to ambient air below 200 K/W. The DC current gain (hFE) for the BC546B group ranges from 200 to 450 at 2 mA and 5 V. The gain-bandwidth product is 300 MHz, and collector-emitter saturation voltage is 600 mV maximum at 100 mA collector current and 5 mA base current. Operating and storage junction temperatures range from -55°C to +150°C.

Datasheet Summary
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The BC546xBK series consists of NPN silicon epitaxial planar transistors designed for general-purpose applications, housed in a TO-92 plastic case measuring 4.6±0.1 mm in length with a weight of approximately 0.18 g. The case material meets UL 94V-0 flammability rating. The BC546 variant has a maximum collector-emitter voltage of 85 V and collector-base voltage of 80 V, with a continuous collector current rating of 100 mA and peak current of 200 mA. Power dissipation is rated at 500 mW, with thermal resistance to ambient air below 200 K/W. The DC current gain (hFE) for the BC546B group ranges from 200 to 450 at 2 mA and 5 V. The gain-bandwidth product is 300 MHz, and collector-emitter saturation voltage is 600 mV maximum at 100 mA collector current and 5 mA base current. Operating and storage junction temperatures range from -55°C to +150°C.

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1324248-BC546BBK - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1324248-BC546BBK
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1324248-BC546BBK
Manufacturer: Diotec Semiconductor Win Source Part Number: 1324248-BC546BBK Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Packaging: Strip Standard Package: 30 Mounting: Through Hole Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 65 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-226-3, TO-92-3 (TO-226AA) Fake Threat In the Open Market: 85 Other Part Number: 2721-BC546BBK RoHS Status: ROHS3 Compliant

Manufacturer: Diotec Semiconductor
Win Source Part Number: 1324248-BC546BBK
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Packaging: Strip
Standard Package: 30
Mounting: Through Hole
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-226-3, TO-92-3 (TO-226AA)
Fake Threat In the Open Market: 85
Other Part Number: 2721-BC546BBK
RoHS Status: ROHS3 Compliant

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 1324248-BC546BBK
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
Polarity NPN
Package Type TO-92; SOT3; TO-226-3, TO-92-3 (TO-226AA)
Packing Method Strip
IC(max) 100 milliamps
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