Diotec Electronics Corporation Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 2SA1012R

Description
Win Source Part Number: 1036482-2SA1012R Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Reel (TR) Standard Package: 30 Mounting: SMD (SMT) Power - Max: 15 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 5 A Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V Frequency - Transition: 60MHz Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-3 (DPAK) Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 82 pct. MSL Level: Not Applicable REACH Status: REACH info available upon request HTSUS: 8541.21.0000 Mfr: Diotec Semiconductor Other Names: 2796-2SA1012RTR,2721 -2SA1012RTR RoHS Status: RoHS non-compliant
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Description
Win Source Part Number: 1036482-2SA1012R Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Reel (TR) Standard Package: 30 Mounting: SMD (SMT) Power - Max: 15 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 5 A Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V Frequency - Transition: 60MHz Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-3 (DPAK) Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 82 pct. MSL Level: Not Applicable REACH Status: REACH info available upon request HTSUS: 8541.21.0000 Mfr: Diotec Semiconductor Other Names: 2796-2SA1012RTR,2721 -2SA1012RTR RoHS Status: RoHS non-compliant
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Datasheet
Datasheet Summary
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The 2SA1012R is a PNP bipolar transistor in a TO-252AA (D-PAK) package designed for high-current amplification and switching. It handles up to 5 A collector current and 50 V collector-emitter voltage, with 15 W power dissipation at 25°C and a maximum junction temperature of 150°C. The DC current gain (hFE) ranges from 70 to 280 at 1 A and 1 V. Collector-emitter saturation voltage is 0.4 V at 150 mA base and 3 A collector current. The gain-bandwidth product is 60 MHz, and collector output capacitance is 170 pF at 10 V. The case material meets UL 94 V-0, and the device complies with RoHS (excluding 7a-I). It is AEC-Q101 compliant when suffixed with -Q or qualified with -AQ. Moisture sensitivity level is 3, and it is supplied taped and reeled, 3000 per 13-inch reel.

Datasheet Summary
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The 2SA1012R is a PNP bipolar transistor in a TO-252AA (D-PAK) package designed for high-current amplification and switching. It handles up to 5 A collector current and 50 V collector-emitter voltage, with 15 W power dissipation at 25°C and a maximum junction temperature of 150°C. The DC current gain (hFE) ranges from 70 to 280 at 1 A and 1 V. Collector-emitter saturation voltage is 0.4 V at 150 mA base and 3 A collector current. The gain-bandwidth product is 60 MHz, and collector output capacitance is 170 pF at 10 V. The case material meets UL 94 V-0, and the device complies with RoHS (excluding 7a-I). It is AEC-Q101 compliant when suffixed with -Q or qualified with -AQ. Moisture sensitivity level is 3, and it is supplied taped and reeled, 3000 per 13-inch reel.

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1036482-2SA1012R - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1036482-2SA1012R
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1036482-2SA1012R
Win Source Part Number: 1036482-2SA1012R Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Reel (TR) Standard Package: 30 Mounting: SMD (SMT) Power - Max: 15 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 5 A Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V Frequency - Transition: 60MHz Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-3 (DPAK) Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 82 pct. MSL Level: Not Applicable REACH Status: REACH info available upon request HTSUS: 8541.21.0000 Mfr: Diotec Semiconductor Other Names: 2796-2SA1012RTR,2721 -2SA1012RTR RoHS Status: RoHS non-compliant

Win Source Part Number: 1036482-2SA1012R
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tape & Reel (TR)
Standard Package: 30
Mounting: SMD (SMT)
Power - Max: 15 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V
Frequency - Transition: 60MHz
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-3 (DPAK)
Temperature Range - Operating: 150°C (TJ)
Fake Threat In the Open Market: 82 pct.
MSL Level: Not Applicable
REACH Status: REACH info available upon request
HTSUS: 8541.21.0000
Mfr: Diotec Semiconductor
Other Names: 2796-2SA1012RTR,2721-2SA1012RTR
RoHS Status: RoHS non-compliant

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Technical Specifications

  Win Source Electronics
Product Category Bipolar RF Transistors
Product Number 1036482-2SA1012R
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
Polarity PNP
Package Type SOT3; TO-252 (DPAK)
IC(max) 5000 milliamps
Power Gain 70 dB
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