DIODES Incorporated Transistor, Pnp, 40V, 1A, 350Mw, Sot-23; Transistor Polarity Diodes Inc. ZXTP2041F

Description
TRANSISTOR, PNP, 40V, 1A, 350mW, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:1A; Power Dissipation:350mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
Description
TRANSISTOR, PNP, 40V, 1A, 350mW, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:1A; Power Dissipation:350mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
Datasheet
Datasheet Summary
Powered by GS/AI

The ZXTP2041F is a PNP transistor designed for medium power applications, featuring a maximum collector-emitter voltage of -40V and a continuous collector current rating of -1A. It supports a peak pulse current of -2A and has a low saturation voltage of less than -500mV at -1A, with an equivalent on-resistance of 350m,Ѷ. The device is housed in a compact SOT-23 package, making it suitable for surface mount applications. This transistor is fully RoHS compliant and is classified as a "Green" device, being halogen and antimony free. It meets AEC-Q101 standards, ensuring high reliability for automotive and other demanding applications. The ZXTP2041F is ideal for power MOSFET gate driving and low-loss power switching applications. It has a power dissipation capability of 350mW and operates within a temperature range of -55¬8C to +150¬8C.

Datasheet Summary
Powered by GS/AI

The ZXTP2041F is a PNP transistor designed for medium power applications, featuring a maximum collector-emitter voltage of -40V and a continuous collector current rating of -1A. It supports a peak pulse current of -2A and has a low saturation voltage of less than -500mV at -1A, with an equivalent on-resistance of 350m,Ѷ. The device is housed in a compact SOT-23 package, making it suitable for surface mount applications. This transistor is fully RoHS compliant and is classified as a "Green" device, being halogen and antimony free. It meets AEC-Q101 standards, ensuring high reliability for automotive and other demanding applications. The ZXTP2041F is ideal for power MOSFET gate driving and low-loss power switching applications. It has a power dissipation capability of 350mW and operates within a temperature range of -55¬8C to +150¬8C.

Suppliers

Company
Product
Description
Supplier Links
Transistor, Pnp, 40V, 1A, 350Mw, Sot-23; Transistor Polarity Diodes Inc. - 13M5714 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Pnp, 40V, 1A, 350Mw, Sot-23; Transistor Polarity Diodes Inc.
13M5714
Transistor, Pnp, 40V, 1A, 350Mw, Sot-23; Transistor Polarity Diodes Inc. 13M5714
TRANSISTOR, PNP, 40V, 1A, 350mW, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:1A; Power Dissipation:350mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

TRANSISTOR, PNP, 40V, 1A, 350mW, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage Max:40V; Continuous Collector Current:1A; Power Dissipation:350mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 13M5714
Product Name Transistor, Pnp, 40V, 1A, 350Mw, Sot-23; Transistor Polarity Diodes Inc.
Transistor Type Transistor, Pnp, 40V, 1A, 350Mw, Sot-23; Transistor Polarity Diodes Inc.
Unlock Full Specs
to access all available technical data

Similar Products

Infineon Technologies AG
Specs
Transistor Type IGBT
View Details
80 V, 1 A PNP medium power transistors - BC53-16PA-QX - Nexperia B.V.
Specs
Package Type SOT1061
View Details
2 suppliers
Transistor - 175624388 - Radwell International
Allen-Bradley / Rockwell Automation
View Details