DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - ZXTP2012A ZXTP2012A

Manufacturer: Diodes Incorporated
Win Source Part Number: 1283535-ZXTP2012A
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: PNP
Frequency - Transition: 120MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.diodes.com/
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Maximum): 3.5A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Current - Collector Cutoff (Maximum): 20nA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Family Part Number: ZXTP2012A
Manufacturer Pack Quantity: 4,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 210mV at 400mA, 4A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 1A, 1V
Maximum Power: 1W

TRANS PNP 60V 3.5A TO92-3 Product overview: ZXTP2012A from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 3.5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-ZXTP2012A can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor

Bipolar (BJT) Transistor