DIODES Incorporated Transistor, Npn & Pnp, Dual, 30V, 1.5A, 1.7W, Sot-23; Transistor Polarity Diodes Inc. ZXTC2045E6

Description
TRANSISTOR, NPN & PNP, DUAL, 30V, 1.5A, 1.7W, SOT-23; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:30V; DC Collector Current:1.5A; Power Dissipation Pd:1.7W; DC Current Gain hFE:300hFE; No. of Pins:6Pins RoHS Compliant: Yes
Description
TRANSISTOR, NPN & PNP, DUAL, 30V, 1.5A, 1.7W, SOT-23; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:30V; DC Collector Current:1.5A; Power Dissipation Pd:1.7W; DC Current Gain hFE:300hFE; No. of Pins:6Pins RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The ZXTC2045E6 is a dual complementary medium power transistor package combining NPN and PNP transistors in an SOT26 case for applications such as MOSFET and IGBT gate driving and motor drive. It has a collector-emitter voltage rating of 30 V for the NPN and -30 V for the PNP, a continuous collector current rating of 1.5 A and -1.5 A, and a power dissipation of 1.1 W. The device meets AEC-Q101 standards for high reliability, is lead-free and RoHS compliant, and has a thermal resistance from junction to ambient of 113 °C/W on a 15 mm x 15 mm FR4 PCB with 1 oz copper. The package dimensions are 3.00 mm in length, 2.80 mm in width, and 1.10 mm in height. The part is rated for operation over a junction and storage temperature range of -55 °C to +150 °C.

Datasheet Summary
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The ZXTC2045E6 is a dual complementary medium power transistor package combining NPN and PNP transistors in an SOT26 case for applications such as MOSFET and IGBT gate driving and motor drive. It has a collector-emitter voltage rating of 30 V for the NPN and -30 V for the PNP, a continuous collector current rating of 1.5 A and -1.5 A, and a power dissipation of 1.1 W. The device meets AEC-Q101 standards for high reliability, is lead-free and RoHS compliant, and has a thermal resistance from junction to ambient of 113 °C/W on a 15 mm x 15 mm FR4 PCB with 1 oz copper. The package dimensions are 3.00 mm in length, 2.80 mm in width, and 1.10 mm in height. The part is rated for operation over a junction and storage temperature range of -55 °C to +150 °C.

Suppliers

Company
Product
Description
Supplier Links
Transistor, Npn & Pnp, Dual, 30V, 1.5A, 1.7W, Sot-23; Transistor Polarity Diodes Inc. - 13M5705 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Npn & Pnp, Dual, 30V, 1.5A, 1.7W, Sot-23; Transistor Polarity Diodes Inc.
13M5705
Transistor, Npn & Pnp, Dual, 30V, 1.5A, 1.7W, Sot-23; Transistor Polarity Diodes Inc. 13M5705
TRANSISTOR, NPN & PNP, DUAL, 30V, 1.5A, 1.7W, SOT-23; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:30V; DC Collector Current:1.5A; Power Dissipation Pd:1.7W; DC Current Gain hFE:300hFE; No. of Pins:6Pins RoHS Compliant: Yes

TRANSISTOR, NPN & PNP, DUAL, 30V, 1.5A, 1.7W, SOT-23; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:30V; DC Collector Current:1.5A; Power Dissipation Pd:1.7W; DC Current Gain hFE:300hFE; No. of Pins:6Pins RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 13M5705
Product Name Transistor, Npn & Pnp, Dual, 30V, 1.5A, 1.7W, Sot-23; Transistor Polarity Diodes Inc.
Transistor Type Transistor, Npn & Pnp, Dual, 30V, 1.5A, 1.7W, Sot-23; Transistor Polarity Diodes Inc.
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