DIODES Incorporated Single Bipolar Transistors ZXT1M322TA

Description
Bipolar (BJT) Transistor PNP 12V 4A 110MHz 3W Surface Mount 3-MLP/DFN (2x2)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 12V 4A 110MHz 3W Surface Mount 3-MLP/DFN (2x2)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - ZXT1M322TATR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
ZXT1M322TATR-ND
Single Bipolar Transistors ZXT1M322TATR-ND
Bipolar (BJT) Transistor PNP 12V 4A 110MHz 3W Surface Mount 3-MLP/DFN (2x2)

Bipolar (BJT) Transistor PNP 12V 4A 110MHz 3W Surface Mount 3-MLP/DFN (2x2)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - ZXT1M322TA - 004868-ZXT1M322TA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - ZXT1M322TA
004868-ZXT1M322TA
TRANSISTORS - Transistors (BJT) - Single - ZXT1M322TA 004868-ZXT1M322TA
Manufacturer: Diodes Incorporated Win Source Part Number: 004868-ZXT1M322TA Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 110MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 3-MLP/DFN (2x2) Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Max Vce (sat): 300mV @ 150mA, 4A Collector Cut-off Current(Max): 25nA Typical Gain (hFE) (Min): 180 @ 2.5A, 2V Maximum Power Dissipation: 3W Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Diodes Incorporated
Win Source Part Number: 004868-ZXT1M322TA
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 110MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 3-MLP/DFN (2x2)
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Max Vce (sat): 300mV @ 150mA, 4A
Collector Cut-off Current(Max): 25nA
Typical Gain (hFE) (Min): 180 @ 2.5A, 2V
Maximum Power Dissipation: 3W
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - ZXT1M322TA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
ZXT1M322TA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) ZXT1M322TA
TRANS PNP 12V 4A 3MLP/DFN

TRANS PNP 12V 4A 3MLP/DFN

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number ZXT1M322TATR-ND 004868-ZXT1M322TA ZXT1M322TA
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - ZXT1M322TA Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP
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